“MOSFET Modeling for VLSI Simulation: Theory and Practice” authored by Arora

“MOSFET Modeling for VLSI Simulation: Theory and Practice” authored by Arora offers a comprehensive guide to understanding and implementing MOSFET models for VLSI (Very Large Scale Integration) circuit simulation. The book covers the theoretical foundations of MOSFET device physics, including the operation principles of metal-oxide-semiconductor field-effect transistors (MOSFETs) and their key characteristics such as threshold voltage, subthreshold behavior, and channel modulation effects. It delves into various MOSFET modeling techniques, from simple empirical models to physics-based models, and discusses their advantages, limitations, and applications in circuit simulation. Through practical examples and case studies, readers learn how to choose and parameterize MOSFET models for accurate and efficient simulation of VLSI circuits, considering factors such as process variations, temperature effects, and device scaling trends. Whether you’re a student, researcher, or practicing engineer in the field of semiconductor device modeling and VLSI design, this book serves as an invaluable resource for mastering MOSFET modeling techniques and advancing your understanding of semiconductor device behavior in integrated circuits.